amplifier transistor pnp silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 40 vdc emitterbase voltage v ebo 4.0 vdc collector current e continuous i c 100 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symb ol min max unit off characteristics collectoremitter breakdown voltage (1) (i c = 1.0 madc, i b = 0) v (br)c eo 40 e vdc emitterbase breakdown voltage (i e = 100 m adc, i c = 0) v (br)e bo 4.0 e vdc collector cutoff current (v cb = 30 vdc, i e = 0) i cbo e 100 nadc 1. pulse test: pulse width 300 s; duty cycle 2.0%. electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (i c = 5.0 madc, v ce = 10 vdc) h fe 40 400 e collectoremitter saturation voltage (i c = 10 madc, i b = 1.0 madc) v ce(sat) e 0.25 vdc smallsignal characteristics currentgain e bandwidth product (i c = 5.0 madc, v ce = 10 vdc, f = 100 mhz) f t 125 e mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo e 4.0 pf on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 1 publication order number: mpsa70/d mpsa70 case 2911, style 1 to92 (to226aa) 1 2 3 collector 3 2 base 1 emitter
mpsa70 http://onsemi.com 2 typical noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 1. noise voltage f, frequency (hz) 5.0 7.0 10 3.0 figure 2. noise current f, frequency (hz) 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.1 bandwidth = 1.0 hz r s 0 i c = 10 m a 100 m a e n , noise voltage (nv) i n , noise current (pa) 30 m a bandwidth = 1.0 hz r s ? i c = 1.0 ma 300 m a 100 m a 30 m a 10 m a 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 2.0 1.0 ma 0.2 300 m a noise figure contours (v ce = 5.0 vdc, t a = 25 c) 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m figure 3. narrow band, 100 hz i c , collector current ( m a) figure 4. narrow band, 1.0 khz i c , collector current ( m a) 10 0.5 db bandwidth = 1.0 hz r s , source resistance (ohms) r s , source resistance (ohms) figure 5. wideband i c , collector current ( m a) 10 10 hz to 15.7 khz r s , source resistance (ohms) noise figure is defined as: nf 20 log 10 e n 2 4ktr s i n 2 r s 2 4ktr s 1 2 = noise voltage of the transistor referred to the input. (figure 3) = noise current of the transistor referred to the input. (figure 4) = boltzman's constant (1.38 x 10 23 j/ k) = temperature of the source resistance ( k) = source resistance (ohms) e n i n k t r s 1.0 db 2.0 db 3.0 db 20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 20 30 50 70 100 200 300 500 700 1.0k bandwidth = 1.0 hz 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db
mpsa70 http://onsemi.com 3 typical static characteristics figure 6. dc current gain i c , collector current (ma) 400 0.003 h , dc current gain fe t j = 125 c -55 c 25 c v ce = 1.0 v v ce = 10 v figure 7. collector saturation region i c , collector current (ma) 1.4 figure 8. collector characteristics i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 1.6 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v * vc for v ce(sat) vb for v be 0.1 0.2 0.5 mpsa70 figure 9. aono voltages i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0 v ce , collector-emitter voltage (volts) 0.002 t a = 25 c mpsa70 i c = 1.0 ma 10 ma 100 ma figure 10. temperature coefficients 50 ma v ce , collector-emitter voltage (volts) 40 60 80 100 20 0 0 i c , collector current (ma) t a = 25 c pulse width = 300 m s duty cycle 2.0% i b = 400 m a 350 m a 300 m a 250 m a 200 m a *applies for i c /i b h fe /2 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c 40 60 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40 1.2 1.0 0.8 0.6 0.4 0.2 0 2.4 0.8 0 1.6 0.8 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 200 100 80 v , temperature coefficients (mv/ c) q 150 m a 100 m a 50 m a
mpsa70 http://onsemi.com 4 typical dynamic characteristics c, capacitance (pf) figure 11. turnon time i c , collector current (ma) 500 figure 12. turnoff time i c , collector current (ma) 2.0 5.0 10 20 30 50 1000 figure 13. currentgain e bandwidth product i c , collector current (ma) figure 14. capacitance v r , reverse voltage (volts) figure 15. input impedance i c , collector current (ma) figure 16. output admittance i c , collector current (ma) 3.0 1.0 500 0.5 10 t, time (ns) t, time (ns) f, current-gain bandwidth product (mhz) t h , output admittance ( mhos) oe h ie , input impedance (k ) w 5.0 7.0 10 20 30 50 70 100 300 7.0 70 100 v cc = 3.0 v i c /i b = 10 t j = 25 c t d @ v be(off) = 0.5 v t r 10 20 30 50 70 100 200 300 500 700 - 2.0 -1.0 v cc = - 3.0 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 t j = 25 c v ce = 20 v 5.0 v 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.05 c ib c ob 2.0 5.0 10 20 50 1.0 0.2 100 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.1 0.2 0.5 v ce = -10 vdc f = 1.0 khz t a = 25 c 2.0 5.0 10 20 50 1.0 2.0 100 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 v ce = 10 vdc f = 1.0 khz t a = 25 c 200 - 3.0 - 5.0 - 7.0 - 20 -10 - 30 - 50 - 70 -10 0 t j = 25 c mpsa70 h fe 200 @ i c = -1.0 ma mpsa70 h fe 200 @ i c = 1.0 ma
mpsa70 http://onsemi.com 5 figure 17. thermal response t, time (ms) 1.0 0.01 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an569) z q ja(t) = r(t) ? r q ja t j(pk) t a = p (pk) z q ja(t) t 1 t 2 p (pk) figure 19 figure 18. activeregion safe operating area t j , junction temperature ( c) 10 4 -40 i c , collector current (na) figure 19. typical collector leakage current v ce , collector-emitter voltage (volts) 400 2.0 i c , collector current (ma) design note: use of thermal response data a train of periodical power pulses can be represented by the model as shown in figure 19. using the model and the device thermal response the normalized effective transient thermal resistance of figure 17 was calculated for various duty cycles. to find z q ja(t) , multiply the value obtained from figure 17 by the steady state value r q ja . example: dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms (d = 0.2) using figure 17 at a pulse width of 1.0 ms and d = 0.2, the reading of r(t) is 0.22. the peak rise in junction temperature is therefore d t = r(t) x p (pk) x r q ja = 0.22 x 2.0 x 200 = 88 c. for more information, see an569. the safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 18 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 17. at high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 -2 10 -1 10 0 10 1 10 2 10 3 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 v cc = 30 v i ceo i cbo and i cex @ v be(off) = 3.0 v t a = 25 c current limit thermal limit second breakdown limit 1.0 ms 10 m s t c = 25 c 1.0 s dc dc 4.0 6.0 10 20 40 60 100 200 4.0 6.0 8.0 10 20 40 t j = 150 c 100 m s
mpsa70 http://onsemi.com 6 package dimensions case 2911 issue al to92 (to226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector
mpsa70 http://onsemi.com 7 notes
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